Preparation of ZnMgO:Ga thin films on flexible substrates by pulsed laser deposition
β Scribed by W. Yuan; L.P. Zhu; Z.Z. Ye; X.Q. Gu
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 208 KB
- Volume
- 256
- Category
- Article
- ISSN
- 0169-4332
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β¦ Synopsis
Transparent conducting ZnMgO:Ga films were deposited on flexible PET substrates by pulsed laser deposition (PLD). Effects of deposition pressure and time on the structural, electrical and optical properties of ZnMgO:Ga films were investigated. The films showed a low resistivity about 7.68 Γ 10 Γ4 V cm when deposited at the pressure of 0.03 Pa for 40 min. All the films exhibited a high transmittance over 80% in the visible and near-ultraviolet region. The band gap of as-grown films was about 3.50 eV.
π SIMILAR VOLUMES
A pulsed Nd:YAG Laser was used to evaporate solid targets of KTiOAsO 4 (KTA) at power densities of 0.6 to 2.0Γ10 9 W/cm 2 . KTA thin films were deposited on glass, Si (100). After proper annealing treatment, single phase, (orthorh-ombic) polycrystalline KTA thin films were obtained. Some propitious