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Effect of strained layer on GaAs power field effect transistor using low temperature buffer

✍ Scribed by Seigo Sano; Ebrahim Heidarpour; Kazuo Nanbu; Takeshi Igarashi; Junji Saito; Takashi Matsumoto

Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 507 KB
Volume: 150
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(95)80138-3

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