✦ LIBER ✦

Effect of silicon-surface orientation in the bulk model of thermal oxidation

✍ Scribed by O. V. Aleksandrov; A. I. Dusj

Book ID: 111444464
Publisher: Springer
Year: 2009
Tongue: English
Weight: 196 KB
Volume: 43
Category: Article
ISSN: 1063-7826
DOI: 10.1134/s1063782609100212

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Bulk model of rapid thermal oxidation of

Bulk model of rapid thermal oxidation of silicon

✍ O. V. Aleksandrov; A. I. Dus’ 📂 Article 📅 2009 🏛 Pleiades Publishing 🌐 English ⚖ 202 KB

Effect of oxidation on orientation-depen

Effect of oxidation on orientation-dependent boron diffusion in silicon

✍ W.G. Allen 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 770 KB

Model of structural transformations on t

Model of structural transformations on the chemically etched silicon surface during thermal oxidation

✍ Rużzyłło, J. 📂 Article 📅 1978 🏛 John Wiley and Sons 🌐 English ⚖ 231 KB

Molecular orientation of tridecafluorosi

Molecular orientation of tridecafluorosilane on the surface of oxidized silicon

✍ E.W Salaneck; K Uvdal; H Elwing; A Askendal; S Welin-Klintström; I Lundström; W. 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 561 KB

Model of thermal oxidation of silicon at

Model of thermal oxidation of silicon at the volume-reaction front

✍ O. V. Aleksandrov; A. I. Dusj 📂 Article 📅 2008 🏛 Springer 🌐 English ⚖ 211 KB

Recent Advances in Models for Thermal Ox

Recent Advances in Models for Thermal Oxidation of Silicon

✍ Krishna Garikipati; Vinay S. Rao 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 706 KB

Recent advances are presented in the models for thermal oxidation that have been been introduced by Rao and co-workers. The level-set formulation for movement of the Si-SiO 2 interface has been improved by the application of an efficient velocityprojection scheme for noninterface points. A penalty f