✦ LIBER ✦

Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate

✍ Scribed by Ook Sang Yoo; Jungwoo Oh; Chang Yong Kang; Byoung Hun Lee; In Shik Han; Won-Ho Choi; Hyuk-Min Kwon; Min-Ki Na; Prashant Majhi; Hsing-Huang Tseng; Raj Jammy; Jin Suk Wang; Hi-Deok Lee

Book ID: 108215581
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 710 KB
Volume: 154-155
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2008.06.031

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Formation of Ge islands from a Ge layer

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

✍ I. Kovačević; B. Pivac; P. Dubček; H. Zorc; N. Radić; S. Bernstorff; M. Campione 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 906 KB

Initial growth process of GaAs on Ge sub

Initial growth process of GaAs on Ge substrate and pseudomorphic Si interlayer

✍ T. Kawai; H. Yonezu; Y. Yamauchi; M. Lopez; K. Pak; W. Kürner 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 387 KB

Reverse current reduction of Ge photodio

Reverse current reduction of Ge photodiodes on Si without post-growth annealing

✍ Sungbong Park, Sungbong Park; Shinya Takita, Shinya Takita; Yasuhiko Ishikawa, Y 📂 Article 📅 2009 🏛 Optics InfoBase 🌐 English ⚖ 613 KB

Effect of annealing under stress on defe

Effect of annealing under stress on defect structure of Si–Ge

✍ A. Misiuk; N.V. Abrosimov; P. Romanowski; J. Bak-Misiuk; A. Wnuk; B. Surma; W. W 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 653 KB

Growth of microcrystalline Si and (Si, G

Growth of microcrystalline Si and (Si, Ge) on plastic substrates

✍ Karl Erickson; Vikram L Dalal 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 133 KB

Fabrication of SiGe-on-insulator by rapi

Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

✍ Kentaro Kutsukake; Noritaka Usami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Kazu 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 228 KB