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Effect of rapid thermal annealing on thermoelectric properties of bismuth telluride films grown by co-sputtering

โœ Scribed by Dong-Ho Kim; Gun-Hwan Lee

Book ID
108215363
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
282 KB
Volume
131
Category
Article
ISSN
0921-5107

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Zn 1-x Cd x O layers were deposited on the sapphire substrate using the radio-frequency magnetron co-sputtering system. The grown Zn 1-x Cd x O layers were carried out in the post-annealing treatment for 1 min at the 800 o C oxygen-ambient by the rapid thermal annealing (RTA) method. X-ray diffracti