Thin films of TiO 2 were grown on n-type Si substrate by thermal oxidation of Ti films deposited by dc sputtering. The phase purity of TiO 2 was confirmed by Raman spectroscopy, and secondary ion mass spectroscopy was used to analyze the interfacial and chemical composition of the TiO 2 thin films.
β¦ LIBER β¦
Effect of rapid thermal annealing on the structural and electrical properties of TiO2thin films prepared by plasma enhanced CVD
β Scribed by Jong-Wha Kim; Do-Oh Kim; Yoon-Bong Hahn
- Book ID
- 110643826
- Publisher
- Springer US
- Year
- 1998
- Tongue
- English
- Weight
- 810 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0256-1115
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