The electrical resistivity p(T) of CePtSi 2 has been measured up to 20 kbar. It is found that two maxima exist in p(T) at ambient pressure but merge into a broad peak above 10 kbar. The thermal expansion coefficient a(T) is also measured at ambient pressure. A large enhancement in a/T is observed at
Effect of pressure on the electrical resistivity of CePtSi2
✍ Scribed by Oomi, Gendo; Kagayama, Tomoko; Uwatoko, Yoshiya; Takahashi, Hiroki; Mōri, Nobuo
- Book ID
- 122520489
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 323 KB
- Volume
- 207-208
- Category
- Article
- ISSN
- 0925-8388
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