Electrical resistivity p(T) and the magnetoresistance (MR) of CePtGa have been measured under high pressure up to 2 GPa. It is found that the N6el temperature T N decreases with increasing pressure and disappears above 1 GPa. MR at 4.2 K is negative showing an H2-dependence. The magnitude of the HLcoefficient A decreases with increasing pressure having the rate of dlAI/dP = -6.4 Γ 10 4 T-2 GPa 1.
Recently, Ce-based ternary compounds have been studied extensively because of their anomalous physical properties such as heavy fermion behavior, Kondo effect, valence fluctuation, metal-insulator transition and so forth [1,2]. These properties are considered to arise from the hybridization between localised 4f electrons and conduction electrons. Since the hybridization strength Vcf of Ce-based compounds is enhanced by an application of pressure, these compounds show a wide variety of physical properties under high pressure. An equiatomic ternary compound CePtGa has the orthorhombic TiNiSi-type structure and is a Kondo compound showing antiferromagnetic order with N6ei temperature T N = 3.5K.
In this work, we present the results of measurements of the electrical resistivity and magnetoresistance at 4.2 K under high pressure up to 2 GPa in order to obtain information about the electron correlation in this ternary compound.
A polycrystalline sample of CePtGa was prepared by arc melting in a purified argon atmosphere. Hydrostatic pressure up to 2 GPa was generated using a Cu-Be piston-cylinder device of a 1:1 mixture of Fluorinert, FC 70 and 77 as a pressure transmitting