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Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based onp-HgCdTe

✍ Scribed by A. V. Vishnyakov; V. S. Varavin; M. O. Garifullin; A. V. Predein; V. G. Remesnik; I. V. Sabinina; G. Yu. Sidorov

Book ID
111511007
Publisher
Allerton Press Inc
Year
2009
Tongue
English
Weight
247 KB
Volume
45
Category
Article
ISSN
8756-6990

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