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Effect of oxygen partial pressure on the morphology and properties of Ce doped YBCO films fabricated by a MOCVD process

✍ Scribed by Y.H. Kim; C.-J. Kim; B.-H. Jun; T.H. Sung; Y.H. Han; S.C. Han; H.J. Paik; J.S. Youn; K. No

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
362 KB
Volume
469
Category
Article
ISSN
0921-4534

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## Abstract Ce‐doped silica films with various Ce concentrations were prepared via ion beam sputtering (IBS) and ion implantation. The samples containing 1.46 at.% Ce were annealed at various temperatures from 500 to 1100 °C in air ambient and a separate sample with the same Ce concentration was an