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Effect of Mg Doping on the Electrical Characteristics of High Performance IGZO Thin Film Transistors

✍ Scribed by Wu, H.-C.; Liu, T.-S.; Chien, C.-H.

Book ID
121693573
Publisher
The Electrochemical Society
Year
2013
Tongue
English
Weight
546 KB
Volume
3
Category
Article
ISSN
2162-8769

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w