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Effect of lateral dimensional scaling on the thermal stability of poly-CoSi2 reacted on Si (001)

✍ Scribed by A. Alberti; F. La Via; S. Ravesi; E. Rimini

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
506 KB
Volume
50
Category
Article
ISSN
0167-9317

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✦ Synopsis

The effect of lateral dimensional scaling on the thermal stability of polycrystalline cobalt disilicide wires reacted on Si (001) has been studied down to 0.6 mm linewidth. An unpatterned silicide has been used as a reference sample. The annealing processes were performed in N environment, between 900 and 10508C, on both blanket and patterned silicide. 2

Transmission electron microscopy analyses in plan-view and cross-section allowed us to study the morphology of lines before and after high-temperature processes. Resistance measurements showed a better thermal stability in blanket silicide layer compared to narrow lines. The electrical behaviour of the lines has been explained in terms of both lateral roughness and hole formation in the silicide layer.

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