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Effect of irradiation with intermediate-energy ions on structure and electrophysical properties of silicon dioxide films in a mos system

โœ Scribed by T. A. Kholomina


Book ID
112426324
Publisher
Springer
Year
1978
Tongue
English
Weight
467 KB
Volume
21
Category
Article
ISSN
1573-9228

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## Abstract Microcrystalline silicon films were deposited in a matrix distributed electron cyclotron resonance (MDECR) plasma enhanced chemical vapor deposition (PECVD) system using pure silane, under varying substrate bias conditions. Microstructural characterization of the films shows a lower voi