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Effect of irradiation temperature on the efficiency of introduction of multivacancy defects inton-Si crystals

✍ Scribed by T. A. Pagava

Book ID
111443583
Publisher
Springer
Year
2006
Tongue
English
Weight
187 KB
Volume
40
Category
Article
ISSN
1063-7826

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Proton bombarded p-Si and neutron irradiated n-GaAs have been studied by DLTS, current±voltage, and capacitance±voltage measurements in metal±semiconductor junctions. The junctions were prepared by evaporation of Al onto silicon and of gold onto GaAs. Both junctions exhibited defect bands after bomb