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Effect of ion implantation doping on electrical properties of yttria-stabilized zirconia thin films

✍ Scribed by B.A. van Hassel; A.J. Burggraaf

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
689 KB
Volume
57
Category
Article
ISSN
0167-2738

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Layers of yttria-stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has bee