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Effect of interfacial stress at the Si/SiO2, interface on the diffusion of Ga in Si through SiO2

✍ Scribed by Jain, G. C. ;Chakravarty, B. C. ;Prasad, A.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
405 KB
Volume
64
Category
Article
ISSN
0031-8965

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Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp