The peculiarities of Si/SiO2 interfaces
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T. Kryshtab; G. GΓ³mez Gasga; N. Korsunska; M. Baran; S. Kirillova; L. Khomenkova
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Article
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2010
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Elsevier Science
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English
β 281 KB
Si-rich-SiO 2 layers with excess silicon of 45-50% were grown by RF magnetron co-sputtering from pure SiO 2 and Si targets and were studied by Raman scattering, HRTEM, electron-paramagnetic resonance and X-ray diffraction (XRD) methods as well as by photo-voltage technique operated at different temp