Effect of interface traps on Debye thickness semiconductor films
β Scribed by V. Sandomirsky; A.V. Butenko; I.G. Kolobov; A. Ronen; Y. Schlesinger
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 488 KB
- Volume
- 252
- Category
- Article
- ISSN
- 0169-4332
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The effects of trapping temperature and column film thickness were investigated with respect to their ability to promote effective cryofocusing on fused silica capillary columns. The study was a further development of the purge and trap with whole column cryotrapping (P&T/WCC) method. The rates at w
The effect of hydrogen on p-type Si/Mn and Si/Co Schottky diode has been investigated in present studies. The variations of I-V characteristics suggested that the rectifying act of these diodes change with variation of hydrogen pressure, which is due to the diffusion of hydrogen through the Mn and C
Contact electrification experiments have been performed for the purpose of studying the effect of varying film thickness on charge transfer during metal-insulator contact. Thin films of plasma polymerized methane are deposited on silicon substrates using a magnetically enhanced glow discharge system