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Effect of interface structure on the Ru on HfO2work function

โœ Scribed by Atashi B. Mukhopadhyay; Javier Fdez Sanz; Charles B. Musgrave

Publisher
Springer
Year
2010
Tongue
English
Weight
459 KB
Volume
45
Category
Article
ISSN
0022-2461

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Influence of initial surface reconstruct
Influence of initial surface reconstruction on the interface structure of HfO2/GaAs
โœ Tetsuji Yasuda; Noriyuki Miyata; Akihiro Ohtake ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 431 KB

We show that the bonding structures and electrical properties of the HfO 2 /GaAs interface can be controlled by a choice of the reconstruction on the initial GaAs surface. Electron-beam evaporation of HfO 2 onto the c(4 ร‚ 4) surface yielded As-O bonds at the interface, while Ga-O bonds were dominant