Effect of In content of the buffer layer on crystalline quality and electrical property of In0.82Ga0.18As/InP grown by LP-MOCVD

✍ Scribed by Tiemin Zhang; Guoqing Miao; Yixin Jin; Jianchun Xie; Hong Jiang; Zhiming Li; Hang Song

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 409 KB
• Volume: 38
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2007.01.015