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Effect of High-Pressure Oxygen Annealing on Bi2SiO5-Added Ferroelectric Thin Films

✍ Scribed by Kijima, Takeshi; Kawashima, Yoshihito; Idemoto, Yasushi; Ishiwara, Hiroshi

Book ID
115447327
Publisher
Institute of Pure and Applied Physics
Year
2002
Tongue
English
Weight
77 KB
Volume
41
Category
Article
ISSN
0021-4922

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w