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Effect of high-current flash annealing on amorphous samples

✍ Scribed by C. Morón; M.C. Sánchez; E. López; P. Sánchez; C. Aroca

Book ID
113316113
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
584 KB
Volume
101
Category
Article
ISSN
0304-8853

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w