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Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

✍ Scribed by S. Binetti; S. Pizzini; R. Somaschini; A. Le Donne; Dongsheng Li; Deren Yang


Book ID
108411257
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
158 KB
Volume
66
Category
Article
ISSN
0167-9317

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The effect of reactive ion etching and plasma etching on the electrical properties of boron-doped silicon has been studied, employing junction capacitance measurements on Schottky diodes. Deep-level transient spectroscopy measurements on the treated samples reveal the presence of a number of previou