Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate

✍ Scribed by Lim, J. Y. ;Song, J. D. ;Choi, W. J. ;Yang, H. S.

• Book ID: 105365590
• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 500 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200925475

✦ Synopsis

Abstract

The purpose of this work is to find optimal conditions for the growth of three‐dimensional (3D) InAs islands on (2 × 1) (001) Si substrate using modified Stranski–Krastanow (S–K) method. From the analysis of atomic‐force‐microscopy (AFM) images and reflection‐high‐energy‐electron‐diffraction (RHEED) patterns, we have found that InAs islands can be grown on Si when the growth temperature is in the range of 370–430 °C and also when In‐injection of more than three periods is used. At the growth temperature of 390 °C and In‐injection of four periods, uniform distribution of islands with the highest density of about 600 /µm^2^ were obtained. The average width and height of these islands were 36.1 ± 9.2 nm and 6.2 ± 2.0 nm, respectively.