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Temperature-dependent morphology of three-dimensional InAs islands grown on silicon

✍ Scribed by Sharma, P. C.; Alt, K. W.; Yeh, D. Y.; Wang, K. L.

Book ID
118747426
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
551 KB
Volume
75
Category
Article
ISSN
0003-6951

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## Abstract The purpose of this work is to find optimal conditions for the growth of three‐dimensional (3D) InAs islands on (2 × 1) (001) Si substrate using modified Stranski–Krastanow (S–K) method. From the analysis of atomic‐force‐microscopy (AFM) images and reflection‐high‐energy‐electron‐diffra