𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effect of growth conditions on incorporation of Si into Ga and As sublattices of GaAs during molecular-beam epitaxy

✍ Scribed by I. A. Bobrovnikova; M. D. Vilisova; I. V. Ivonin; L. G. Lavrent’eva; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin; S. V. Subach; S. E. Toropov

Book ID
110135518
Publisher
Springer
Year
2003
Tongue
English
Weight
80 KB
Volume
37
Category
Article
ISSN
1063-7826

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth dynamics of GaAs, AlAs and (Al, G
Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy
✍ B. A. Joyce; J. H. Neave; M. R. Fahy; K. Sato; D. M. Holmes; J. G. Belk; J. L. S 📂 Article 📅 1996 🏛 Springer US 🌐 English ⚖ 816 KB

The growth dynamics of GaAs, AlAs and (AI, Ga)As films grown by molecular beam epitaxy (MBE) on GaAs (11 0) and (1 11)Asubstrates have been studied using reflection high energy electron diffraction (RHEED) intensity oscillations and scanning tunnelling microscopy (STM). In contrast to growth on (0 0

Incorporation behaviour of carbon and si
Incorporation behaviour of carbon and silicon on (100) and (111) surfaces during growth of GaAs/GaAs and Ga0.47In0.53As/InP by molecular beam epitaxy
✍ J.M. Schneider; J. Ziegler; H. Heinecke 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 445 KB

Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hal