In this paper, the effects of Ge content and profile shape on the performance of a SiGe-based heterojunction bipolar transistor (HBT) are investigated. The common-emitter current gain, the early voltage, and the transit time of SiGe HBTs are calculated and computed for different Ge profiles as well
Effect of Ge profile design on the performance of an n–p–n SiGe HBT-based analog circuit
✍ Scribed by Ankit Kashyap; R.K. Chauhan
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 301 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0026-2692
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