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The effect of C on emitter–base design for a single-polysilicon SiGe:C HBT with an IDP emitter

✍ Scribed by Erik Haralson; Erdal Suvar; Gunnar Malm; Henry Radamson; Yong-Bin Wang; Mikael Östling


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
305 KB
Volume
224
Category
Article
ISSN
0169-4332

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