Disorder Effects on the Gap of Thin Si N
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S. MΓ©nard; A. SaΓΊl; F. Bassani; F. Arnaud d'Avitaya
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Article
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1999
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John Wiley and Sons
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English
β 169 KB
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The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o