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Effect of energy distribution of interface states on the capacitance and conductance of Schottky barrier and MIS tunnel contacts

✍ Scribed by Raychaudhuri, B. ;Chattopadhyay, P.


Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
223 KB
Volume
141
Category
Article
ISSN
0031-8965

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The electrical characterization of the In/p-Si Schottky diode has been investigated by conductance and capacitance-frequency techniques. The characteristic parameters of the interface states have been determined from the capacitance-frequency and conductance-frequency measurements. The capacitance o