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Effect of ECR plasma on the luminescence efficiency of InGaAs and InP

โœ Scribed by F. Ren; D.N. Buckley; K.M. Lee; S.J. Pearton; R.A. Bartynski; C. Constantine; W.S. Hobson; R.A. Hamm; P.C. Chao


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
377 KB
Volume
38
Category
Article
ISSN
0038-1101

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The photoluminescence (PL) properties of undoped \(\operatorname{InGaAs} / \mathrm{InP}\) quantum wires are studied in a magnetic field up to \(16 \mathrm{~T}\). The quantum wires are fabricated with a combination of electron-beam lithography, reverse mesa wet etching, and metal organic-vapour-phase