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Strong lateral quantization effects in the luminescence of InGaAs/InP quantum wires

โœ Scribed by P. Ils; M. Michel; A. Forchel; I. Gyuro; M. Klenk; E. Zielinski


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
384 KB
Volume
37
Category
Article
ISSN
0038-1101

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Magneto-luminescence study of quasi-one-
โœ J. Hammersberg; H. Weman; M. Notomi; T. Tamamura ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 262 KB

The photoluminescence (PL) properties of undoped \(\operatorname{InGaAs} / \mathrm{InP}\) quantum wires are studied in a magnetic field up to \(16 \mathrm{~T}\). The quantum wires are fabricated with a combination of electron-beam lithography, reverse mesa wet etching, and metal organic-vapour-phase