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Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

✍ Scribed by D.G. Zhao; D.S. Jiang; L.L. Wu; L.C. Le; L. Li; P. Chen; Z.S. Liu; J.J. Zhu; H. Wang; S.M. Zhang; H. Yang

Book ID
118461472
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
962 KB
Volume
544
Category
Article
ISSN
0925-8388

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## Abstract Epitaxial lateral overgrowth (ELO) of low‐dislocation‐density AlN layers on trench‐patterned sapphire substrates is demonstrated for the first time. Sapphire (0001) substrates with trench patterns formed along two different directions, γ€ˆ10$ 10 \bar 10 $0〉 and γ€ˆ11$ 11 \bar 20 $0〉, were u