๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Effect of dislocation loop size on the deep level transient spectrum in Si

โœ Scribed by Kononchuk, O. V. ;Nikitenko, V. I. ;Orlov, V. I. ;Yakimov, E. B.

Publisher
John Wiley and Sons
Year
1994
Tongue
English
Weight
198 KB
Volume
143
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

The effect of pressure on the annealing
The effect of pressure on the annealing of dislocation loops in aluminium
โœ D.I.R Norris ๐Ÿ“‚ Article ๐Ÿ“… 1966 ๐Ÿ› Elsevier Science โš– 732 KB

Thin foils of quenched aluminium have been annealed at hydrostatic pressures up to 60 kb and temperatures up to 289ยฐC. Observation by transmission electron microscopy before and after treatment has enabled a determination of temperature ranges within which dislocation loops anneal out at different p

On the nature of dislocation loops in As
On the nature of dislocation loops in As-implanted and post- annealed Si wafers
๐Ÿ“‚ Article ๐Ÿ“… 1978 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 162 KB

system. We observed a typical dissociation efficiency of 0.63 from the hydrogen discharge and of 0.73 from a mixture of hydrogen and argon. After coating with concentrated ortho-phosphoric acid. a hydrogen dissociation efficiency as high as 0.82 could be observed. The fraction of dissociated oxygen