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Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffraction

✍ Scribed by Cembali, F. ;Servidori, M. ;Gabilli, E. ;Lotti, R.

Publisher
John Wiley and Sons
Year
1985
Tongue
English
Weight
569 KB
Volume
87
Category
Article
ISSN
0031-8965

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## Abstract Thick 3C‐SiC single crystals grown by continuous‐feed physical vapor transport (CF‐PVT) are studied by high‐resolution X‐ray reciprocal space mapping. These crystals contain Shockley‐type stacking faults (SFs) lying in the {111} planes, which give rise to diffuse intensity streaks along