Analysis of the mixing effect in InAlAs/
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K. Aliberti; B. Stann; S. Svensson; R. Mehandru; F. Ren; H. Shen
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Article
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2003
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John Wiley and Sons
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English
β 116 KB
## Abstract The optoelectronic mixing effect in InAlAs Schottkyβenhanced InGaAsβbased metalβsemiconductorβmetal photodetectors (MSMβPDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends