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Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors

✍ Scribed by Arafa, M.; Wohlmuth, W.A.; Fay, P.; Adesida, I.


Book ID
114537157
Publisher
IEEE
Year
1998
Tongue
English
Weight
134 KB
Volume
45
Category
Article
ISSN
0018-9383

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## Abstract The optoelectronic mixing effect in InAlAs Schottky‐enhanced InGaAs‐based metal‐semiconductor‐metal photodetectors (MSM‐PDs) is analyzed. The measured frequency bandwidth of the optoelectronic mixer (OEM) is less than that of a corresponding photodetector. The mixing efficiency depends