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Effect of Cycle Annealing Parameters on Dislocation Density Reduction for HgCdTe on Si

✍ Scribed by S. Farrell; Mulpuri V. Rao; G. Brill; Y. Chen; P. Wijewarnasuriya; N. Dhar; D. Benson; K. Harris

Book ID
107457321
Publisher
Springer US
Year
2011
Tongue
English
Weight
386 KB
Volume
40
Category
Article
ISSN
0361-5235

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## Abstract It is shown that after plastic deformation in clean conditions the most efficient recombination defects in Si are dislocation trails. The DLTS spectrum associated with the defects in the dislocation trails in p‐Si are revealed. The thermal annealing effect on the electrical properties o