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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy

✍ Scribed by Funase, Y.; Suzuno, M.; Toko, K.; Suemasu, T.


Book ID
121891722
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
590 KB
Volume
378
Category
Article
ISSN
0022-0248

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