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Effect of As Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

✍ Scribed by Shashidhar Shintri; Sunil Rao; Wendy Sarney; Saurabh Garg; Witold Palosz; Sudhir Trivedi; Priyalal Wijewarnasuriya; Ishwara Bhat

No coin nor oath required. For personal study only.

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Cyclic Annealing During Metalorganic Vap

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Direct growth of high-quality thick CdTe

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Optimisation of a thin epitaxial Si laye

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X-ray Diffraction Imaging of Improved Bu

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A GeSi-buffer structure for growth of hi

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