Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

✍ Scribed by B. De Jaeger; R. Bonzom; F. Leys; O. Richard; J. Van Steenbergen; G. Winderickx; E. Van Moorhem; G. Raskin; F. Letertre; T. Billon; M. Meuris; M. Heyns

• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 648 KB
• Volume: 80
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2005.04.040