Using erbium acetate as an Er source, transparent ZnO films doped with Er were fabricated by sol-gel method through spin-coating on quartz substrates. The as-prepared ZnO:Er films were annealed in air at 400 • C for 6 h, at 600 • C, 800 • C and 1000 • C for 2 h, respectively. The ZnO:Er films exhibi
Effect of annealing temperature on the quality of Al-doped ZnO thin films prepared by sol–gel method
✍ Scribed by Chi-ming Lai; Keh-moh Lin; Stella Rosmaidah
- Publisher
- Springer
- Year
- 2011
- Tongue
- English
- Weight
- 886 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0928-0707
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