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Effect of annealing temperature on the microstructural and electrical properties of epitaxial Ga-doped ZnO film deposited on c-sapphire substrate

✍ Scribed by Zhiyun Zhang; Chonggao Bao; Qun Li; Shengqiang Ma; Shuzeng Hou

Publisher
Springer US
Year
2011
Tongue
English
Weight
815 KB
Volume
23
Category
Article
ISSN
0957-4522

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## Abstract We report on optimization of growth conditions by studying the structural and optical properties of ZnO films grown on sapphire substrate by pulsed laser deposition at different growth temperatures. The crystallographic structure and surface morphology were studied by X‐ray diffraction