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Effect of annealing temperature on ferroelectric properties of (Bi, Nd)4(Ti, V)3O12 thin films

โœ Scribed by Zhi YE; Ming-hua TANG; Chuan-pin CHENG; Yi-chun ZHOU; Xue-jun ZHENG; Zeng-shun HU

Book ID
117693054
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
522 KB
Volume
16
Category
Article
ISSN
1003-6326

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Ferroelectric properties of Sm-doped Bi4
Ferroelectric properties of Sm-doped Bi4Ti3O12thin films
โœ Chen, M. ;Liu, Z. L. ;Wang, Y. ;Yao, K. L. ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 230 KB

## Abstract Smโ€doped bismuth titanate and random oriented Bi~4โ€“__x__~Sm__~x~__Ti~3~O~12~ (BST) thin films were fabricated on Pt/Ti/SiO~2~/Si substrates using a pulsed laser deposition method. The structures and the ferroelectric properties of the films were investigated. Sm doping leads to a marked