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Ferroelectric properties of Sm-doped Bi4Ti3O12thin films

✍ Scribed by Chen, M. ;Liu, Z. L. ;Wang, Y. ;Yao, K. L.

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
230 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Sm‐doped bismuth titanate and random oriented Bi~4–x~Sm__~x~Ti~3~O~12~ (BST) thin films were fabricated on Pt/Ti/SiO~2~/Si substrates using a pulsed laser deposition method. The structures and the ferroelectric properties of the films were investigated. Sm doping leads to a marked improvement in the remanent polarization (P~r~) and the coercive field (E~c~). At an applied electric field of 100 kV/cm, P~r~ and E~c~ of a BST (x = 0.8) film annealed at 650 Β°C are 20.5 Β΅C/cm^2^ and 60 kV/cm, respectively. However, after 3 Γ— 10^10^ switching cycles, 20% degradation of 2__P~r~ is observed in the film. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Leakage current and ferroelectric memory
Leakage current and ferroelectric memory in Nd and Sm substituted Bi4Ti3O12 films
✍ M.S. Tomar; R.E. Melgarejo; S.P. Singh πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 384 KB

Leakage current in ferroelectric devices is important because it affects the saturation. Rare earth substituted bismuth titanate (Bi 4 Ti 3 O 12 ) electroceramics has emerged as new material system for non-volatile ferroelectric memory. We synthesized Bi 4Kx M x Ti 3 O 12 (MZNd, Sm) for different co