## Abstract Indium tin oxide (ITO) thin films (In/Sn = 90:10) prepared by the sol–gel dip‐coating process on glass substrates, followed by annealing in air in the temperature range 150–550 °C were studied. Overall the films structure, surface roughness, and electrical performances are improved, lea
Effect of annealing temperature on electrical and nano-structural properties of sol–gel derived ZnO thin films
✍ Scribed by M. Vishwas; K. Narasimha Rao; A. R. Phani; K. V. Arjuna Gowda; R. P. S. Chakradhar
- Publisher
- Springer US
- Year
- 2011
- Tongue
- English
- Weight
- 462 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0957-4522
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