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Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

โœ Scribed by Sibirev, N. V.; Bouravleuv, A. D.; Trushkov, Yu. M.; Beznasyuk, D. V.; Samsonenko, Yu. B.; Cirlin, G. E.

Book ID
121617078
Publisher
Springer
Year
2013
Tongue
English
Weight
355 KB
Volume
47
Category
Article
ISSN
1063-7826

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Effect of As/In-flux on the growth of In
Effect of As/In-flux on the growth of InAs nanowire by molecular beam epitaxy
โœ J. Bubesh Babu; Kanji Yoh ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 592 KB

Au-assisted growth of InAs nanowire by molecular beam epitaxy is highly governed by the surface diffusion kinetics on the surface and the sidewalls of the growing nanowire. In this paper, we discuss the effects of growth temperature, As/In flux ratio, substrate orientation on the growth of InAs nano