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Effect of Alcohol-Assisted Annealing on the Quality of Silicon Oxide Thin Film

✍ Scribed by Ito, Takuya; Ota, Yasuyuki; Shiomori, Koichiro; Nishioka, Kensuke

Book ID
125373884
Publisher
Springer US
Year
2014
Tongue
English
Weight
599 KB
Volume
43
Category
Article
ISSN
0361-5235

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## Abstract We study the influence of high‐temperature annealing (1100–1200 Β°C) on the crystallization of nitrogen‐doped silicon films deposited by LPCVD (low‐pressure chemical vapor deposition) at low temperature (465 Β°C) from disilane Si~2~H~6~ and ammonia NH~3~. Scanning electron microscopy (SEM