Effect of beam voltage on the properties
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J. H. Edgar; C. A. Carosella; C. R. Eddy; D. T. Smith
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Article
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1996
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Springer US
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English
โ 709 KB
The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disord