✦ LIBER ✦

Editorial - Thin-film-transistor modelling for circuit simulation

✍ Scribed by Tejada, J.A.J.

Book ID: 114442622
Publisher: The Institution of Engineering and Technology
Year: 2012
Tongue: English
Weight: 65 KB
Volume: 6
Category: Article
ISSN: 1751-858X
DOI: 10.1049/iet-cds.2012.0047

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling of amorphous-silicon thin-film

Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE

✍ Khakzar, K.; Lueder, E.H. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 494 KB

Analytical device models for disordered

Analytical device models for disordered organic Schottky diodes and thin-film transistors for circuit simulations

✍ Raja, M.; Eccleston, W. 📂 Article 📅 2012 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 411 KB

A physical-based analytical turn-on mode

A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

✍ Gi-Young Yang; Sung-Hoi Hur; Chul-Hi Han 📂 Article 📅 1999 🏛 IEEE 🌐 English ⚖ 320 KB

Physical models for amorphous-silicon th

Physical models for amorphous-silicon thin-film transistors and their implementation in a circuit simulation program

✍ Hack, M.; Shur, M.S.; Shaw, J.G. 📂 Article 📅 1989 🏛 IEEE 🌐 English ⚖ 585 KB

Parameter extraction method for universa

Parameter extraction method for universal amorphous silicon thin-film transistors simulation program with integrated circuit emphasis model

✍ Jin, J.W.; Oudwan, M.; Daineka, D.; Moustapha, O.; Bonnassieux, Y. 📂 Article 📅 2012 🏛 The Institution of Engineering and Technology 🌐 English ⚖ 118 KB

An analytical model for turn-on characte

An analytical model for turn-on characteristics of short channel polycrystalline-silicon thin-film transistor for circuit simulation

✍ Sonia Chopra; R.S. Gupta 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 539 KB

Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold cha