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A physical-based analytical turn-on model of polysilicon thin-film transistors for circuit simulation

โœ Scribed by Gi-Young Yang; Sung-Hoi Hur; Chul-Hi Han


Book ID
114537532
Publisher
IEEE
Year
1999
Tongue
English
Weight
320 KB
Volume
46
Category
Article
ISSN
0018-9383

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An analytical model for turn-on characte
โœ Sonia Chopra; R.S. Gupta ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 539 KB

Short channel effects are incorporated to investigate the impact of the channel length on the turn-on characteristics of a polycrystalline silicon thin-film transistor (poly-Si TFT). The developed threshold voltage and field effect mobility are the key parameters in analysing the above-threshold cha