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Edge states of epitaxially grown graphene on 4H-SiC(0001) studied by scanning tunneling microscopy

✍ Scribed by M. Ye; Y. T. Cui; Y. Nishimura; Y. Yamada; S. Qiao; A. Kimura; M. Nakatake; H. Namatame; M. Taniguchi


Book ID
111623310
Publisher
Springer
Year
2010
Tongue
English
Weight
506 KB
Volume
75
Category
Article
ISSN
1434-6036

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A characterization of the graphitic overlayer that forms on 4H-SiCð0 0 0 1Þ substrates heated for ten minutes to temperatures T > 1350 °C under vacuum conditions has been performed. X-ray photoelectron spectroscopy of the C-face reveals the presence of graphitic carbon with a thickness that increas